BAS 16 B5003 Infineon Technologies, BAS 16 B5003 Datasheet - Page 2

• Manufacturer Part Number: BAS 16 B5003
• Description: DIODE SW SGL HS 80V 250MA SOT-23
• Manufacturer: Infineon Technologies

Specifications of BAS 16 B5003

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 80V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 85 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4.5 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAS16B5003INTR; BAS16B5003XT; SP000223866

Maximum Ratings at T
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
BAS16
BAS16-02L, -07L4
BAS16-02V, -02W
BAS16-03W
BAS16S
BAS16U
BAS16W
Non-repetitive peak surge forward current
t = 1 µs, BAS16/ S/ U/ W/ -03W
t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4
t = 1 s
Total power dissipation
BAS16, T
BAS16-02L, -07L4, T
BAS16-02V, -02W, T
BAS16-03W, T
BAS16S, T
BAS16U, T
BAS16W, T
Junction temperature
Storage temperature
S
S
S
≤ 54 °C
S
≤ 85 °C
≤ 113 °C
≤ 119 °C
S
≤ 116 °C
S
S
≤ 120 °C
≤ 130 °C
A
= 25 °C, unless otherwise specified
2
Symbol
V
V
I
I
P
T
T
F
FSM
j
stg
R
RM
tot
-65 ...150
Value
250
200
200
250
200
200
250
370
250
250
250
250
250
250
150
4.5
2.5
0.5
80
85
2009-09-28
BAS16...
Unit
V
mA
A
mW
°C