BAS 16 B5003 Infineon Technologies, BAS 16 B5003 Datasheet - Page 3

• Manufacturer Part Number: BAS 16 B5003
• Description: DIODE SW SGL HS 80V 250MA SOT-23
• Manufacturer: Infineon Technologies

Specifications of BAS 16 B5003

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 80V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 85 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 4.5 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAS16B5003INTR; BAS16B5003XT; SP000223866

Electrical Characteristics at T
Parameter
DC Characteristics
Breakdown voltage
I
Reverse current
V
V
V
Forward voltage
I
I
I
I
I
Forward recovery voltage
I
1
Thermal Resistance
Parameter
Junction - soldering point
BAS16, BAS16S
BAS16-02L, -07L4
BAS16-02V, -02W
BAS16-03W
BAS16U
BAS16W
(BR)
F
F
F
F
F
F
For calculation of R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 100 mA
= 150 mA
= 10 mA, t
= 75 V
= 25 V, T
= 75 V, T
= 100 µA
A
A
P
= 150 °C
= 150 °C
= 20 ns
thJA
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
3
Symbol
V
I
V
V
Symbol
R
R
(BR)
F
fr
thJS
min.
85
-
-
-
-
-
-
-
-
-
Values
≤ 120
≤ 135
≤ 150
≤ 125
Value
≤ 260
≤ 80
typ.
-
-
-
-
-
-
-
-
-
-
max.
1000
1200
1250
1.75
715
855
30
50
1
-
2009-09-28
BAS16...
Unit
V
µA
mV
V
Unit
K/W