IDH05S60C Infineon Technologies, IDH05S60C Datasheet - Page 4

• Manufacturer Part Number: IDH05S60C
• Description: DIODE SCHOTTKY 600V 5A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDH05S60C

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.7V @ 5A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 5A (DC)
• Current - Reverse Leakage @ Vr: 70µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 240pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 5A
• Forward Voltage Vf Max: 1.7V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 42A
• Operating: RoHS Compliant
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 5.0 A
• Qc (typ): 12.0 nC
• Package: TO-220 real 2pin
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IDT05S60C; IDT05S60C; IDT05S60CX; IDT05S60CXK; SP000096441; SP000797662

Rev. 2.0
5 Typ. forward power dissipation vs.
average forward current
P
7 Transient thermal impedance
Z
parameter: D =t
thJC
F,AV
=f(t
=f(I
10
10
10
10
30
25
20
15
10
5
0
-1
-2
1
0
10
p
0
F
)
), T
0.01
-5
0.1
0.05
0.5
0.02
single pulse
0.2
C
=100 °C, parameter: D =t
2
p
10
/T
-4
0.1
0.2
4
10
I
-3
F(AV)
t [s]
6
0.5
[A]
10
-2
8
p
1
/T
10
10
-1
10
page 4
12
0
6 Typ. reverse current vs. reverse voltage
I
parameter: T
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
300
250
200
150
100
10
10
10
10
10
10
50
R
R
-1
-2
-3
0
2
1
0
); T
)
10
100
-1
C
=25 °C, f =1 MHz
j
200
10
0
300
V
V
-55ºC
25ºC
10
R
R
[V]
[V]
1
100ºC
400
150ºC
175ºC
10
IDH05S60C
2
500
2010-04-27
10
600
3