IDH05S60C Infineon Technologies, IDH05S60C Datasheet - Page 3

• Manufacturer Part Number: IDH05S60C
• Description: DIODE SCHOTTKY 600V 5A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDH05S60C

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.7V @ 5A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 5A (DC)
• Current - Reverse Leakage @ Vr: 70µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 240pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 5A
• Forward Voltage Vf Max: 1.7V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 42A
• Operating: RoHS Compliant
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 5.0 A
• Qc (typ): 12.0 nC
• Package: TO-220 real 2pin
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IDT05S60C; IDT05S60C; IDT05S60CX; IDT05S60CXK; SP000096441; SP000797662

Rev. 2.0
1 Power dissipation
P
parameter: R
3 Typ. forward characteristic
I
parameter: T
F
tot
=f(V
=f(T
60
50
40
30
20
10
15
10
F
0
5
0
); t
C
25
0
)
p
=400 µs
thJC(max)
j
50
1
-55 °C
75
25 °C
T
V
C
100
F
2
[°C]
[V]
100 °C
125
150 °C
3
150
175 °C
175
page 3
4
2 Diode forward current
I
parameter: R
4 Typ. forward characteristic in surge current
mode
I
F
F
=f(T
=f(V
12.5
60
50
40
30
20
10
C
F
7.5
2.5
0
15
10
); T
); t
5
0
0
25
p
j
=400 µs; parameter: T
≤175 °C
thJC(max)
50
2
; V
75
150 °C
F(max)
25 °C
100 °C
100
V
T
-55 °C
F
C
4
[V]
[°C]
125
j
150
175 °C
6
IDH05S60C
175
2010-04-27
200
8