IDH05S60C Infineon Technologies, IDH05S60C Datasheet - Page 2

• Manufacturer Part Number: IDH05S60C
• Description: DIODE SCHOTTKY 600V 5A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDH05S60C

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.7V @ 5A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 5A (DC)
• Current - Reverse Leakage @ Vr: 70µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 240pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 5A
• Forward Voltage Vf Max: 1.7V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 42A
• Operating: RoHS Compliant
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 5.0 A
• Qc (typ): 12.0 nC
• Package: TO-220 real 2pin
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IDT05S60C; IDT05S60C; IDT05S60CX; IDT05S60CXK; SP000096441; SP000797662

Rev. 2.0
1)
2)
3)
di/dt), different from t
absence of minority carrier injection.
4)
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
DC blocking voltage
Diode forward voltage
Reverse current
AC characteristics
Total capacitive charge
Switching time
t
J-STD20 and JESD22
All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
Only capacitive charge occuring, guaranteed by design.
c
is the time constant for the capacitive displacement current waveform (independent from T
3)
rr
, which is dependent on T
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
Q
t
C
R
c
DC
F
thJC
thJA
c
j
, I
leaded
I
I
I
V
V
V
di
T
V
V
V
R
F
F
LOAD
page 2
j
=5 A, T
=5 A, T
R
R
R
R
R
R
=0.07 mA
=150 °C
F
=600 V, T
=600 V, T
=400 V,I
=1 V, f = MHz
=300 V, f =1 MHz
=600 V, f =1 MHz
/dt =200 A/µs,
, di/dt. No reverse recovery time constant t
j
j
=25 °C
=150 °C
F
≤I
j
j
=25 °C
=150 °C
F,max
,
min.
600
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
240
1.5
1.7
0.6
2.5
12
30
30
-
-
-
-
max.
j
700
<10
, I
IDH05S60C
2.7
1.7
2.1
62
70
-
-
-
-
-
LOAD
rr
due to
and
Unit
K/W
V
µA
nC
ns
pF
2010-04-27