IDV02S60C Infineon Technologies, IDV02S60C Datasheet - Page 4

• Manufacturer Part Number: IDV02S60C
• Description: DIODE SCHOTTKY 600V 2A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDV02S60C

• Diode Type: Silicon Carbide Schottky
• Voltage - Forward (vf) (max) @ If: 1.9V @ 2A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 2A (DC)
• Current - Reverse Leakage @ Vr: 15µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 60pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 1.9V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 11.5A
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 2.0 A
• Qc (typ): 3.2 nC
• Package: TO-220 FullPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IDT02S60C; IDT02S60C; SP000274984; SP000659198

Rev. 2.0
5 Typ. capacitance charge vs. current slope
Q
7 Transient thermal impedance
Z
parameter: D =t
thJC
C
=f(di
=f(t
10
10
10
10
4
3
2
1
0
100
-1
-2
1
0
10
F
p
/dt )
)
-5
0.02
0.05
0
0.1
4)
0.2
; T
0.5
p
/T
j
=150 °C; I
10
-4
400
di
F
/d t [A/µs]
F
t
≤I
10
P
[s]
-3
F,max
700
10
-2
1000
10
page 4
-1
6 Typ. reverse current vs. reverse voltage
I
parameter: T
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
10
10
10
10
10
10
60
45
30
15
-10
R
R
0
-5
-6
-7
-8
-9
); T
)
10
100
0
C
=25 °C, f =1 MHz
j
200
10
1
-55 °C
300
25 °C
V
V
R
R
100 °C
[V]
[V]
150 °C
175 °C
400
10
2
IDT02S60C
500
2007-04-25
10
600
3