IDV02S60C Infineon Technologies, IDV02S60C Datasheet - Page 2

no-image

IDV02S60C

Manufacturer Part Number
IDV02S60C
Description
DIODE SCHOTTKY 600V 2A TO220-2
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheets

Specifications of IDV02S60C

Diode Type
Silicon Carbide Schottky
Voltage - Forward (vf) (max) @ If
1.9V @ 2A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
2A (DC)
Current - Reverse Leakage @ Vr
15µA @ 600V
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
60pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
2A
Forward Voltage Vf Max
1.9V
Reverse Recovery Time Trr Max
10ns
Forward Surge Current Ifsm Max
11.5A
Technology
thinQ!™ 2G
V
600.0 V
If (typ)
2.0 A
Qc (typ)
3.2 nC
Package
TO-220 FullPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IDT02S60C
IDT02S60C
SP000274984
SP000659198

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDV02S60C
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.0
1)
2)
3)
di/dt), different from t
absence of minority carrier injection.
4)
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics
Static characteristics
DC blocking voltage
Diode forward voltage
Reverse current
AC characteristics
Total capacitive charge
Switching time
t
J-STD20 and JESD22
All devices tested under avalanche condition, for a time periode of 5ms, at 5mA.
Only capacitive charge occuring, guaranteed by design.
c
is the time constant for the capacitive displacement current waveform (independent from T
3)
rr
, which is dependent on T
Symbol Conditions
R
R
T
V
V
I
Q
t
C
R
c
sold
DC
F
thJC
thJA
c
j
, I
leaded
1.6mm (0.063 in.) from
case for 10s
I
I
I
I
I
V
V
V
di
T
V
V
V
R
F
F
F
F
LOAD
page 2
j
=2 A, T
=2 A, T
=3 A, T
=3 A, T
R
R
R
R
R
R
=0.05mA, T
=150 °C
F
=600 V, T
=600 V, T
=400 V,I
=1 V, f = MHz
=300 V, f =1 MHz
=600 V, f =1 MHz
/dt =200 A/µs,
, di/dt. No reverse recovery time constant t
j
j
j
j
=25 °C
=150 °C
=25 °C
=150 °C
F
≤I
j
j
=25 °C
=150 °C
j
=25°C
F,max
,
min.
600
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.23
typ.
1.7
2.1
2.1
2.8
3.2
60
1
8
8
-
-
-
-
-
max.
j
260
150
<10
, I
8.5
1.9
2.6
2.4
3.7
IDT02S60C
62
15
-
-
-
-
-
LOAD
rr
due to
and
Unit
K/W
°C
V
µA
nC
ns
pF
2007-04-25

Related parts for IDV02S60C