RB160L-90TE25 Rohm Semiconductor, RB160L-90TE25 Datasheet - Page 3

• Manufacturer Part Number: RB160L-90TE25
• Description: DIODE SCHOTTKY 95V 1A PMDS
• Manufacturer: Rohm Semiconductor

Specifications of RB160L-90TE25

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 730mV @ 1A
• Voltage - Dc Reverse (vr) (max): 90V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 100µA @ 90V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-106, PMDS
• Repetitive Reverse Voltage Vrrm Max: 95V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 730mV
• Forward Surge Current Ifsm Max: 30A
• Diode Case Style: SOD-106
• No. Of Pins: 2
• Svhc: No SVHC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Diodes
30
25
20
15
10
0.8
0.6
0.4
0.2
5
0
1
0
0
10 20 30 40 50 60 70 80 90
AVE:1.70kV
VR-P
REVERSE VOLTAGE:VR(V)
C=200pF
R=0Ω
ESD DISPERSION MAP
Sin(θ＝180)
R
CHARACTERISTICS
DC
AVE:10.7kV
D=1/2
C=100pF
R=1.5kΩ
2.5
1.5
0.5
3
2
1
0
0
Sin(θ＝180)
AMBIENT TEMPERATURE:Ta(℃)
D=1/2
DC
25
Derating Curveﾞ(Io-Ta)
50
0A
0V
75
t
100
T
D=t/T
Tj=150℃
125
VR=45V
VR
Io
150
2.5
1.5
0.5
3
2
1
0
0
Sin(θ＝180)
25
CASE TEMPARATURE:Tc(℃)
D=1/2
DC
Derating Curve(Io-Tc)
50
RB160L-90
75
0A
0V
100
t
T
125
D=t/T
Tj=150℃
VR=45V
VR
Io
3/3
150