PMEG6030EP,115 NXP Semiconductors, PMEG6030EP,115 Datasheet - Page 6

• Manufacturer Part Number: PMEG6030EP,115
• Description: DIODE SCHOTTKY 60V 3A SOD128
• Manufacturer: NXP Semiconductors

Specifications of PMEG6030EP,115

• Package / Case: SOD-128 Flat Leads
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Current - Reverse Leakage @ Vr: 200µA @ 60V
• Voltage - Forward (vf) (max) @ If: 530mV @ 3A
• Voltage - Dc Reverse (vr) (max): 60V
• Capacitance @ Vr, F: 360pF @ 1V, 1MHz
• Current - Average Rectified (io): 3A
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 3 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.53 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061481115

NXP Semiconductors
PMEG6030EP_1
Product data sheet
Fig 4.
Fig 6.
(A)
I
(1) T
(2) T
(3) T
(4) T
(5) T
10
10
10
10
F
10
−1
−2
−3
−4
1
0.0
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse voltage; typical values
j
j
j
j
j
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(1)
(2)
0.1
0.2
amb
(3)
= 25 °C
0.3
(4)
0.4
(5)
(pF)
C
700
d
600
500
400
300
200
100
0.5
0
0
006aab881
V
0.6
F
(V)
Rev. 01 — 21 January 2010
0.7
20
Fig 5.
40
(A)
I
(1) T
(2) T
(3) T
(4) T
10
10
10
10
10
10
10
10
R
−1
−2
−3
−4
−5
−6
−7
−8
0
Reverse current as a function of reverse
voltage; typical values
V
3 A low V
j
j
j
j
R
= 125 °C
= 85 °C
= 25 °C
= −40 °C
006aab883
(V)
60
F
20
MEGA Schottky barrier rectifier
PMEG6030EP
(1)
(2)
(3)
(4)
40
© NXP B.V. 2010. All rights reserved.
V
R
006aab882
(V)
60
6 of 13