PMEG6030EP,115 NXP Semiconductors, PMEG6030EP,115 Datasheet - Page 11

• Manufacturer Part Number: PMEG6030EP,115
• Description: DIODE SCHOTTKY 60V 3A SOD128
• Manufacturer: NXP Semiconductors

Specifications of PMEG6030EP,115

• Package / Case: SOD-128 Flat Leads
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Current - Reverse Leakage @ Vr: 200µA @ 60V
• Voltage - Forward (vf) (max) @ If: 530mV @ 3A
• Voltage - Dc Reverse (vr) (max): 60V
• Capacitance @ Vr, F: 360pF @ 1V, 1MHz
• Current - Average Rectified (io): 3A
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 3 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.53 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061481115

NXP Semiconductors
12. Revision history
Table 9.
PMEG6030EP_1
Product data sheet
Document ID
PMEG6030EP_1
Revision history
Release date
20100120
Data sheet status
Product data sheet
Rev. 01 — 21 January 2010
3 A low V
Change notice
-
F
MEGA Schottky barrier rectifier
PMEG6030EP
Supersedes
-
© NXP B.V. 2010. All rights reserved.
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