PMEG6030EP,115 NXP Semiconductors, PMEG6030EP,115 Datasheet - Page 5

• Manufacturer Part Number: PMEG6030EP,115
• Description: DIODE SCHOTTKY 60V 3A SOD128
• Manufacturer: NXP Semiconductors

Specifications of PMEG6030EP,115

• Package / Case: SOD-128 Flat Leads
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Current - Reverse Leakage @ Vr: 200µA @ 60V
• Voltage - Forward (vf) (max) @ If: 530mV @ 3A
• Voltage - Dc Reverse (vr) (max): 60V
• Capacitance @ Vr, F: 360pF @ 1V, 1MHz
• Current - Average Rectified (io): 3A
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 3 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.53 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061481115

NXP Semiconductors
7. Characteristics
PMEG6030EP_1
Product data sheet
Fig 3.
Z
(K/W)
th(j-a)
10
10
10
−1
1
2
10
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−3
duty cycle =
0.25
0.02
0.5
0.1
1
0
0.75
0.33
0.05
0.01
0.2
Table 7.
T
2
Symbol
V
I
C
10
R
O
j
F
d
= 25
3
−2
, standard footprint
°
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
10
−1
Rev. 01 — 21 January 2010
1
Conditions
I
I
I
I
I
I
V
V
V
f = 1 MHz
F
F
F
F
F
F
R
R
R
= 0.1 A
= 0.5 A
= 1 A
= 1.5 A
= 2 A
= 3 A
V
V
= 5 V
= 10 V
= 60 V
R
R
= 1 V
= 10 V
3 A low V
10
F
MEGA Schottky barrier rectifier
Min
-
-
-
-
-
-
-
-
-
-
-
PMEG6030EP
10
2
Typ
290
340
380
400
430
460
4
5
80
360
120
t
p
© NXP B.V. 2010. All rights reserved.
(s)
006aab668
Max
330
400
440
470
500
530
-
-
200
-
-
10
3
Unit
mV
mV
mV
mV
mV
mV
μA
μA
μA
pF
pF
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