PMEG3015EV,115 NXP Semiconductors, PMEG3015EV,115 Datasheet - Page 5

• Manufacturer Part Number: PMEG3015EV,115
• Description: SCHOTTKY RECT 30V 1.5A SOT666
• Manufacturer: NXP Semiconductors

Specifications of PMEG3015EV,115

• Package / Case: SS Mini-6 (SOT-666)
• Voltage - Forward (vf) (max) @ If: 550mV @ 1.5A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1.5A (DC)
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 72pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1.5 A
• Max Surge Current: 9.5 A
• Configuration: Single Dual Anode Quad Cathode
• Forward Voltage Drop: 0.55 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058427115; PMEG3015EV T/R; PMEG3015EV T/R

NXP Semiconductors
PMEG3015EV_2
Product data sheet
Fig 1.
Fig 3.
(mA)
I
10
(1) T
(2) T
(3) T
(4) T
(5) T
F
10
10
10
10
−1
1
4
3
2
0
Forward current as a function of forward
voltage; typical values
T
Diode capacitance as a function of reverse voltage; typical values
amb
amb
amb
amb
amb
amb
(5)
(4)
= −40 °C
= 25 °C
= 85 °C
= 125 °C
= 150 °C
= 25 °C; f = 1 MHz
(3)
0.2
(2)
(1)
(pF)
0.4
C
120
d
80
40
0
0
V
F
006aaa079
(V)
Rev. 02 — 4 February 2010
0.6
10
30 V, 1.5 A ultra low V
Fig 2.
(mA)
I
R
20
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
(5) T
10
10
10
−1
−2
−3
−4
−5
1
3
2
0
Reverse current as a function of reverse
voltage; typical values
V
amb
amb
amb
amb
amb
R
006aaa076
(V)
= −40 °C
= 25 °C
= 85 °C
= 125 °C
= 150 °C
4
30
8
F
MEGA Schottky barrier rectifier
12
PMEG3015EV
16
20
(5)
(4)
24
© NXP B.V. 2010. All rights reserved.
006aaa075
V
R
28
(V)
(3)
(2)
(1)
32
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