PMEG3015EV,115 NXP Semiconductors, PMEG3015EV,115 Datasheet - Page 4

• Manufacturer Part Number: PMEG3015EV,115
• Description: SCHOTTKY RECT 30V 1.5A SOT666
• Manufacturer: NXP Semiconductors

Specifications of PMEG3015EV,115

• Package / Case: SS Mini-6 (SOT-666)
• Voltage - Forward (vf) (max) @ If: 550mV @ 1.5A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1.5A (DC)
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 72pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1.5 A
• Max Surge Current: 9.5 A
• Configuration: Single Dual Anode Quad Cathode
• Forward Voltage Drop: 0.55 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058427115; PMEG3015EV T/R; PMEG3015EV T/R

NXP Semiconductors
7. Characteristics
PMEG3015EV_2
Product data sheet
Table 7.
T
[1]
Symbol
V
I
C
R
amb
F
d
Pulse test: t
= 25
°
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
p
≤ 300 μs; δ ≤ 0.02.
Rev. 02 — 4 February 2010
30 V, 1.5 A ultra low V
Conditions
I
I
I
I
I
I
V
V
V
F
F
F
F
F
F
R
R
R
= 1 mA
= 10 mA
= 100 mA
= 500 mA
= 1 A
= 1.5 A
= 10 V
= 30 V
= 1 V; f = 1 MHz
F
MEGA Schottky barrier rectifier
[1]
[1]
[1]
[1]
[1]
[1]
PMEG3015EV
Min
-
-
-
-
-
-
-
-
-
Typ
125
185
255
340
410
480
60
400
60
© NXP B.V. 2010. All rights reserved.
Max
160
220
290
380
480
550
150
1000
72
Unit
mV
mV
mV
mV
mV
mV
μA
μA
pF
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