MMBD4148,215 NXP Semiconductors, MMBD4148,215 Datasheet - Page 4

• Manufacturer Part Number: MMBD4148,215
• Description: DIODE HIGH SPEED SWITCHING SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBD4148,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 75V
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Current - Average Rectified (io): 215mA (DC)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063957215

NXP Semiconductors
MMBD4148_1
Product data sheet
Fig 1.
Fig 3.
(mA)
( A)
I
I
(1) T
(2) T
(3) T
(4) T
(1) T
(2) T
(3) T
(4) T
10
10
10
10
10
10
R
F
10
10
10
10
10
1
1
3
2
1
2
1
2
3
4
5
0
0
Forward current as a function of forward
voltage; typical values
Reverse current as a function of reverse
voltage; typical values
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
0.2
20
0.4
(1)
40
(2)
0.6
(3)
(1)
(2)
(3)
(4)
0.8
(4)
60
1.0
80
006aab132
006aab133
1.2
V
V
R
F
(V)
(V)
100
1.4
Rev. 01 — 4 June 2009
Fig 2.
Fig 4.
I
FSM
(A)
(pF )
10
C
10
0.8
0.6
0.4
0.2
10
d
1
0
2
1
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
0
j
= 25 C; prior to surge
10
4
amb
= 25 C
High-speed switching diode
10
8
2
MMBD4148
10
12
© NXP B.V. 2009. All rights reserved.
3
t
V
p
R
( s)
mbg704
mbg446
(V)
10
16
4
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