MMBD4148,215 NXP Semiconductors, MMBD4148,215 Datasheet - Page 3

• Manufacturer Part Number: MMBD4148,215
• Description: DIODE HIGH SPEED SWITCHING SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBD4148,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 75V
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Current - Average Rectified (io): 215mA (DC)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063957215

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
MMBD4148_1
Product data sheet
Table 6.
[1]
Table 7.
T
[1]
[2]
[3]
Symbol
R
R
Symbol
V
I
C
t
V
R
rr
amb
F
FR
th(j-a)
th(j-t)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Pulse test: t
When switched from I
When switched from I
= 25 C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
p
300 s;
F
F
= 10 mA to I
= 10 mA; t
Rev. 01 — 4 June 2009
0.02.
r
= 20 ns.
R
= 10 mA; R
Conditions
I
I
I
I
V
V
V
V
f = 1 MHz; V
F
F
F
F
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 75 V
= 25 V; T
= 75 V; T
Conditions
in free air
L
= 100 ; measured at I
j
j
R
= 150 C
= 150 C
= 0 V
[1]
High-speed switching diode
[1]
[2]
[3]
Min
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
R
= 1 mA.
MMBD4148
Typ
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
500
330
Max
715
855
1
1.25
30
0.5
30
50
1.5
4
1.75
Unit
K/W
K/W
Unit
mV
mV
V
V
nA
pF
ns
V
3 of 10
A
A
A