BAV20,133 NXP Semiconductors, BAV20,133 Datasheet - Page 5

• Manufacturer Part Number: BAV20,133
• Description: DIODE GP 150V 250MA DO-35
• Manufacturer: NXP Semiconductors

Specifications of BAV20,133

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 150V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 150V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 200 V
• Forward Continuous Current: 250 mA
• Max Surge Current: 625 mA
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 nA
• Maximum Power Dissipation: 400 mW
• Maximum Diode Capacitance: 5 pF
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933189200133

NXP Semiconductors
GRAPHICAL DATA
1999 May 25
handbook, full pagewidth
handbook, halfpage
General purpose diodes
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
Based on square wave currents.
T
j
I FSM
= 25 °C prior to surge.
(A)
10
(mA)
10
I F
300
200
100
10
−1
1
2
0
1
0
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
100
10
T amb (
o
C)
MBG449
200
10
5
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
j
j
j
I F
600
400
200
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
Forward current as a function of forward
voltage.
0
10
3
(1)
1
BAV20; BAV21
(2)
t p (μs)
V F (V)
Product data sheet
(3)
MBG703
MBG459
10
4
2