BAV20,133 NXP Semiconductors, BAV20,133 Datasheet - Page 2

• Manufacturer Part Number: BAV20,133
• Description: DIODE GP 150V 250MA DO-35
• Manufacturer: NXP Semiconductors

Specifications of BAV20,133

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 150V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 150V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 200 V
• Forward Continuous Current: 250 mA
• Max Surge Current: 625 mA
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 nA
• Maximum Power Dissipation: 400 mW
• Maximum Diode Capacitance: 5 pF
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933189200133

NXP Semiconductors
FEATURES
• Hermetically sealed leaded glass
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
• Repetitive peak reverse voltage:
• Repetitive peak forward current:
APPLICATIONS
• General purposes in industrial
1999 May 25
SOD27 (DO-35) package
max. 150 V, 200 V
max. 200 V, 250 V
max. 625 mA.
equipment e.g. oscilloscopes,
digital voltmeters and video output
stages in colour television.
General purpose diodes
DESCRIPTION
The BAV20 and BAV21 are switching diodes fabricated in planar technology,
and encapsulated in hermetically sealed leaded glass SOD27 (DO-35)
packages.
The diodes are type branded.
handbook, halfpage
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
2
k
BAV20; BAV21
a
Product data sheet
MAM246