BAV20,133 NXP Semiconductors, BAV20,133 Datasheet - Page 2
![DIODE GP 150V 250MA DO-35](/photos/5/24/52491/do-35_axial_sml.jpg)
BAV20,133
Manufacturer Part Number
BAV20,133
Description
DIODE GP 150V 250MA DO-35
Manufacturer
NXP Semiconductors
Datasheet
1.BAV20133.pdf
(10 pages)
Specifications of BAV20,133
Package / Case
DO-204AH, DO-35, Axial
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
150V
Current - Average Rectified (io)
250mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 150V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Through Hole
Product
Switching Diodes
Peak Reverse Voltage
200 V
Forward Continuous Current
250 mA
Max Surge Current
625 mA
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
100 nA
Maximum Power Dissipation
400 mW
Maximum Diode Capacitance
5 pF
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933189200133
NXP Semiconductors
FEATURES
• Hermetically sealed leaded glass
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
• Repetitive peak reverse voltage:
• Repetitive peak forward current:
APPLICATIONS
• General purposes in industrial
1999 May 25
SOD27 (DO-35) package
max. 150 V, 200 V
max. 200 V, 250 V
max. 625 mA.
equipment e.g. oscilloscopes,
digital voltmeters and video output
stages in colour television.
General purpose diodes
DESCRIPTION
The BAV20 and BAV21 are switching diodes fabricated in planar technology,
and encapsulated in hermetically sealed leaded glass SOD27 (DO-35)
packages.
The diodes are type branded.
handbook, halfpage
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
2
k
BAV20; BAV21
a
Product data sheet
MAM246