BAV20,133 NXP Semiconductors, BAV20,133 Datasheet - Page 3

• Manufacturer Part Number: BAV20,133
• Description: DIODE GP 150V 250MA DO-35
• Manufacturer: NXP Semiconductors

Specifications of BAV20,133

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 150V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 150V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 200 V
• Forward Continuous Current: 250 mA
• Max Surge Current: 625 mA
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 nA
• Maximum Power Dissipation: 400 mW
• Maximum Diode Capacitance: 5 pF
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933189200133

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1999 May 25
V
V
I
I
I
P
T
T
SYMBOL
F
FRM
FSM
stg
j
RRM
R
tot
General purpose diodes
repetitive peak reverse voltage
continuous peak reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
BAV20
BAV21
BAV20
BAV21
PARAMETER
see Fig.2; note 1
square wave; T
surge; see Fig.4
T
amb
t = 1 μs
t = 100 μs
t = 1 s
= 25 °C; note 1
3
CONDITIONS
j
= 25 °C prior to
−
−
−
−
−
−
−
−
−
−
−65
−
MIN.
BAV20; BAV21
200
250
150
200
250
625
9
3
1
400
+175
175
Product data sheet
MAX.
V
V
V
V
mA
mA
A
A
A
mW
°C
°C
UNIT