RB160M-60TR Rohm Semiconductor, RB160M-60TR Datasheet - Page 3

• Manufacturer Part Number: RB160M-60TR
• Description: DIODE SCHOTTKY 60V 1A SOD123
• Manufacturer: Rohm Semiconductor

Specifications of RB160M-60TR

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 550mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 50µA @ 60V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 40pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123 Flat Leads
• Repetitive Reverse Voltage Vrrm Max: 60V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 550mV
• Forward Surge Current Ifsm Max: 30A
• Diode Case Style: SOD-123
• No. Of Pins: 2
• Svhc: No SVHC
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Configuration: Single
• Forward Voltage Drop: 0.55 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Diodes
0.15
0.05
0.2
0.1
30
25
20
15
10
0
5
0
0
10
REVERSE VOLTAGE:VR(V)
VR-P
AVE:5.70kV
C=200pF
R=0Ω
ESD DISPERSION MAP
20
R
CHARACTERISTICS
30
DC
D=1/2
No break at 30kV
40
R=1.5kΩ
C=100pF
Sin(θ＝180)
50
60
2.5
1.5
0.5
3
2
1
0
0
Sin(θ＝180)
D=1/2
25
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
50
0A
0V
75
DC
t
100
T
D=t/T
Tj=150℃
VR=30V
125
VR
Io
150
2.5
1.5
0.5
3
2
1
0
0
Sin(θ＝180)
D=1/2
DC
25
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
50
0A
0V
75
Rev.E
RB160M-60
t
100
T
D=t/T
VR=30V
Tj=150℃
125
VR
Io
150
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