RB160M-60TR Rohm Semiconductor, RB160M-60TR Datasheet
Home Discrete Semiconductor Products Diodes, Rectifiers - Single RB160M-60TR
Manufacturer Part Number
RB160M-60TR
Description
DIODE SCHOTTKY 60V 1A SOD123
Manufacturer
Rohm Semiconductor
Specifications of RB160M-60TR
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
550mV @ 1A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
50µA @ 60V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
40pF @ 10V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOD-123 Flat Leads
Repetitive Reverse Voltage Vrrm Max
60V
Forward Current If(av)
1A
Forward Voltage Vf Max
550mV
Forward Surge Current Ifsm Max
30A
Diode Case Style
SOD-123
No. Of Pins
2
Svhc
No SVHC
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
1 A
Max Surge Current
30 A
Configuration
Single
Forward Voltage Drop
0.55 V
Maximum Reverse Leakage Current
50 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Manufacturer:
Rohm Semiconductor
Diodes
Schottky barrier diode
RB160M-60
General rectification
1) Small power mold type. (PMDU)
2) Low I
3) High reliability.
Silicon epitaxial planar
Features
Construction
Electrical characteristics (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
(*1)Mounted on epoxy board. 180°Half sine wave
Forward voltage
Reverse current
Capacitance terminals
R
.
Parameter
Parameter
Symbol
V
Ct
I
R
F
Dimensions (Unit : mm)
JEDEC :SOD-123
ROHM : PMDU
Taping specifications (Unit : mm)
Min.
-
-
-
Manufacture Date
1.6±0.1
0.9±0.1
1.81±0.1
Symbol
4.0±0.1 2.0±0.05
Tstg
V
I
V
FSM
Io
Tj
RM
Typ.
0.49
R
7.0
40
4.0±0.1
Max.
0.55
50
0.8±0.1
-
0.1±0.1
0.05
-40 to +150
φ1.55±0.05
Limits
150
60
60
30
1
φ1.0±0.1
Unit
µA
pF
V
Land size figure (Unit : mm)
Structure
I
V
V
F
PMDU
R
R
=1.0A
=60V
=10V , f=1MHz
Conditions
Unit
℃
℃
V
V
A
A
0.25±0.05
1.2
1.5MAX
Rev.E
RB160M-60
1/3
Related parts for RB160M-60TR
RB160M-60TR Summary of contents
... Limits Symbol FSM 150 Tj -40 to +150 Tstg Min. Typ. Max. - 0.49 0. RB160M-60 Land size figure (Unit : mm) 1.2 PMDU Structure 0.25±0.05 1.5MAX Unit ℃ ℃ Conditions Unit I =1. =60V µ =10V , f=1MHz pF R Rev.E 1/3 ...
... AVE:11.7ns 0 trr DISPERSION MAP Mounted on epoxy board 1000 IM=10mA IF=0.5A Rth(j-a) 1ms time 100 300us 10 Rth(j-c) 1 0.1 0.001 0.01 0 100 100 TIME:t(s) Rth-t CHARACTERISTICS RB160M-60 1000 f=1MHz 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 Ta=25℃ 90 f=1MHz 80 VR=10V n=10pcs AVE:37.9pF 20 10 ...
... D=t/T 2 VR=30V Tj=150℃ T 1.5 DC D=1/2 1 0.5 Sin(θ＝180 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) RB160M- 2 D=t/T 2 VR=30V DC Tj=150℃ T 1.5 D=1/2 1 0.5 Sin(θ＝180 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 3/3 Rev ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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