HN2D02FUTW1T1G ON Semiconductor, HN2D02FUTW1T1G Datasheet - Page 3

• Manufacturer Part Number: HN2D02FUTW1T1G
• Description: DIODE SWITCH 80V 100MA SC88
• Manufacturer: ON Semiconductor

Specifications of HN2D02FUTW1T1G

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 75V
• Current - Average Rectified (io) (per Diode): 100mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 3ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 3 Independent
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Product: Ultra Fast Recovery Rectifier
• Configuration: Triple Parallel
• Reverse Voltage: 80 V
• Forward Voltage Drop: 1.2 V
• Recovery Time: 3 ns
• Forward Continuous Current: 0.1 A
• Max Surge Current: 1 A
• Reverse Current Ir: 0.1 uA
• Power Dissipation: 0.3 W
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: HN2D02FUTW1T1GOSTR

100
1.0
0.1
10
0.2
0.4
T
A
= 85 C
Figure 2. Forward Voltage
V
F
, FORWARD VOLTAGE (VOLTS)
0.6
0.68
0.64
0.60
0.56
0.52
T
A
= −40 C
0
0.8
T
A
= 25 C
1.0
2
V
R
Figure 4. Capacitance
HN2D02FUTW1T1
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
1.2
4
3
0.001
0.01
1.0
0.1
10
0
6
10
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
8
T
T
T
T
T
A
A
20
A
A
A
= 150 C
= 125 C
= 85 C
= 55 C
= 25 C
30
40
50