HN2D02FUTW1T1G ON Semiconductor, HN2D02FUTW1T1G Datasheet - Page 2

• Manufacturer Part Number: HN2D02FUTW1T1G
• Description: DIODE SWITCH 80V 100MA SC88
• Manufacturer: ON Semiconductor

Specifications of HN2D02FUTW1T1G

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 75V
• Current - Average Rectified (io) (per Diode): 100mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 3ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 3 Independent
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Product: Ultra Fast Recovery Rectifier
• Configuration: Triple Parallel
• Reverse Voltage: 80 V
• Forward Voltage Drop: 1.2 V
• Recovery Time: 3 ns
• Forward Continuous Current: 0.1 A
• Max Surge Current: 1 A
• Reverse Current Ir: 0.1 uA
• Power Dissipation: 0.3 W
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: HN2D02FUTW1T1GOSTR

3. t
ELECTRICAL CHARACTERISTICS
RECOVERY TIME EQUIVALENT TEST CIRCUIT
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time (Figure 1)
rr
Test Circuit
Characteristic
A
Figure 1. Reverse Recovery Time Equivalent Test Circuit
(T
A
= 25 C)
R
L
HN2D02FUTW1T1
http://onsemi.com
t
rr
Symbol
(Note 3)
V
C
V
I
R
R
F
D
2
I
R
F
V
V
L
= 10 mA, V
R
R
= 100 W, I
= 0, f = 1.0 MHz
I
I
F
Condition
R
V
V
INPUT PULSE
= 100 mA
R
R
= 100 mA
t
r
= 35 V
= 75 V
10%
t
t
90%
p
r
rr
= 0.35 ns
R
= 2 ms
= 0.1 I
= 6.0 V,
t
p
R
Min
80
—
—
—
—
—
t
OUTPUT PULSE
I
F
Max
0.1
0.1
1.2
2.0
3.0
—
I
V
R
F
R
L
= 10 mA
= 100 W
= 6 V
t
rr
I
rr
= 0.1 I
mAdc
Unit
Vdc
Vdc
pF
ns
R
t