HN2D02FUTW1T1G ON Semiconductor, HN2D02FUTW1T1G Datasheet
HN2D02FUTW1T1G
Manufacturer Part Number
HN2D02FUTW1T1G
Description
DIODE SWITCH 80V 100MA SC88
Manufacturer
ON Semiconductor
Specifications of HN2D02FUTW1T1G
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 75V
Current - Average Rectified (io) (per Diode)
100mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
3ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Product
Ultra Fast Recovery Rectifier
Configuration
Triple Parallel
Reverse Voltage
80 V
Forward Voltage Drop
1.2 V
Recovery Time
3 ns
Forward Continuous Current
0.1 A
Max Surge Current
1 A
Reverse Current Ir
0.1 uA
Power Dissipation
0.3 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
HN2D02FUTW1T1GOSTR
Available stocks
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Price
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HN2D02FUTW1T1G
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Quantity:
2 000
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30 000
HN2D02FUTW1T1G
Ultra High Speed
Switching Diodes
high speed switching applications. These devices are housed in the
SC−88 package which is designed for low power surface mount
applications.
Features
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. This is maximum rating for a single diode. In the case of using 2 or 3 diodes,
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 3
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Reverse Voltage
Peak Reverse Voltage
Forward Current (Note 1)
Peak Forward Current (Note 1)
Peak Forward Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature
(Note 1)
These Silicon Epitaxial Planar Diodes are designed for use in ultra
Compliant
Fast t
Low C
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
the maximum ratings per diodes is 75% of the single diode.
rr
, < 3.0 ns
D
, < 2.0 pF
Rating
Rating
(T
A
= 25°C)
Symbol
Symbol
V
I
T
I
FSM
V
P
T
FM
I
RM
stg
F
R
D
J
−55 to + 150
Value
Max
100
240
300
150
1.0
80
85
1
mAdc
mAdc
Unit
Unit
Adc
mW
°C
°C
V
V
†For information on tape and reel specifications,
HN2D02FUTW1T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
Device
ORDERING INFORMATION
R7
M
G
MARKING DIAGRAM
http://onsemi.com
= Specific Device Code
= Date Code
= Pb−Free Package
6
1
6
1
CASE 419B
(Pb−Free)
6
SC−88
Package
R7 M G
SC−88
Publication Order Number:
5
2
G
1
HN2D02FUTW1T1/D
4
3
Tape & Reel
Shipping
3000 /
†
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HN2D02FUTW1T1G Summary of contents
Page 1
... Adc FSM Symbol Max Unit P 300 150 ° − 150 °C stg HN2D02FUTW1T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com SC−88 CASE 419B MARKING DIAGRAM ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time (Figure Test Circuit rr RECOVERY TIME EQUIVALENT TEST CIRCUIT A Figure 1. Reverse Recovery Time Equivalent Test Circuit 100 10 ...
Page 3
... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...