HN2D02FUTW1T1G ON Semiconductor, HN2D02FUTW1T1G Datasheet
HN2D02FUTW1T1G
Manufacturer Part Number
HN2D02FUTW1T1G
Description
DIODE SWITCH 80V 100MA SC88
Manufacturer
ON Semiconductor
Specifications of HN2D02FUTW1T1G
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 75V
Current - Average Rectified (io) (per Diode)
100mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
3ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Product
Ultra Fast Recovery Rectifier
Configuration
Triple Parallel
Reverse Voltage
80 V
Forward Voltage Drop
1.2 V
Recovery Time
3 ns
Forward Continuous Current
0.1 A
Max Surge Current
1 A
Reverse Current Ir
0.1 uA
Power Dissipation
0.3 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
HN2D02FUTW1T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HN2D02FUTW1T1G
Manufacturer:
Mallory Sonalert Products
Quantity:
2 000
Company:
Part Number:
HN2D02FUTW1T1G
Manufacturer:
ON Semiconductor
Quantity:
17 527
Company:
Part Number:
HN2D02FUTW1T1G
Manufacturer:
ON
Quantity:
30 000
HN2D02FUTW1T1
Ultra High Speed
Switching Diodes
high speed switching applications. These devices are housed in the
SC−88 package which is designed for low power surface mount
applications.
1. t = 10 ms
2. This is maximum rating for a single diode. Derate by 75 percent when
January, 2004 − Rev. 1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Reverse Voltage
Reverse Voltage
Peak Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature
These Silicon Epitaxial Planar Diodes are designed for use in ultra
Fast t
Low C
Available in 8 mm Tape and Reel
Semiconductor Components Industries, LLC, 2004
using 2 or 3 diodes.
rr
, < 3.0 ns
D
, < 2.0 pF
Use HN2D02FUTW1T1 to order the 7 inch/3000 unit reel.
Rating
Rating
(T
A
= 25 C)
Symbol
(Note 1)
Symbol
V
V
I
T
I
FSM
V
V
P
T
FM
I
RM
RM
stg
F
R
R
D
J
−55 to + 150
Value
Max
100
240
300
150
1.0
80
80
85
85
1
mAdc
mAdc
mAdc
Unit
Unit
mW
C
C
MARKING DIAGRAM
http://onsemi.com
R7 = for Specified
M = Date Code
6
1
1
CASE 419B
2
Device Code
SC−88
R7 M
3
5
2
Publication Order Number:
6
5
4
3
HN2D02FUTW1T1/D
4
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HN2D02FUTW1T1G Summary of contents
Page 1
HN2D02FUTW1T1 Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−88 package which is designed for low power surface mount applications. Fast t ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time (Figure Test Circuit rr RECOVERY TIME EQUIVALENT TEST CIRCUIT A Figure 1. Reverse Recovery Time Equivalent Test Circuit HN2D02FUTW1T1 (T ...
Page 3
1 − 0.1 0.2 0.4 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 2. Forward Voltage 0.68 0.64 0.60 0.56 0.52 0 HN2D02FUTW1T1 10 1.0 0.1 ...
Page 4
... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 PER ANSI Y14.5M, 1982. 419B−02. INCHES MILLIMETERS DIM ...