SBR100-16JS SANYO, SBR100-16JS Datasheet

DIODE SCHOTTKY 160V 10A TO-220ML

SBR100-16JS

Manufacturer Part Number
SBR100-16JS
Description
DIODE SCHOTTKY 160V 10A TO-220ML
Manufacturer
SANYO
Datasheet

Specifications of SBR100-16JS

Voltage - Forward (vf) (max) @ If
800mV @ 5A
Current - Reverse Leakage @ Vr
100µA @ 160V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
160V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3, TO-220ML(LS)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Other names
869-1021
Ordering number : ENA0456
SBR100-16JS
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Note) * : Value per element
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Thermal Resistance
High frequency rectification (switching regulators, converters, choppers).
Tj=150 C.
Low forward voltage (V F max=0.80V).
Short reverse recovery time.
Low switching noise.
High reliability due to planar structure.
Attachment workability is good by Mica-less package.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Symbol
Symbol
Rth(j-c)
V RRM
V RSM
I FSM
Tstg
V R
V F
I O
I R
Tj
C
SANYO Semiconductors
50Hz resistive load, Sine wave Tc=110 C
50Hz sine wave, 1 cycle
I R =2mA, Tj=25 C*
I F =5A, Tj=25 C*
V R =160V, Tj=25 C*
V R =10V, Tj=25 C*
Junction-Case : Smoothed DC
SBR100-16JS
Schottky Barrier Diode (Twin Type · Cathode Common)
160V, 10A Rectifier
Conditions
Conditions
DATA SHEET
91306SD MS IM TC-00000158
min
160
Ratings
typ
Ratings
0.77
94
5
--55 to +150
--55 to +150
max
0.80
160
165
100
100
4.0
10
No. A0456-1/3
C / W
Unit
Unit
pF
V
V
A
A
V
V
C
C
A

Related parts for SBR100-16JS

SBR100-16JS Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SBR100-16JS SANYO Semiconductors Schottky Barrier Diode (Twin Type · Cathode Common) 160V, 10A Rectifier ...

Page 2

... Sine wave 12 180 360 10 Rectangular wave 8 (1) 6 360 4 (1)Rectangular wav e =60 (2)Rectangular wav e =120 2 (3)Rectangular wav e =180 (4)Sine wav e =180 Average Output Current SBR100-16JS 1 : Anode 2 : Cathode 3 : Anode SANYO : TO-220ML(LS) 10 1.0 0.1 0.8 1.0 1.2 IT11246 3.0 2.5 (3) (4) 2.0 (2) 1.5 1.0 0 ...

Page 3

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice. SBR100-16JS 100 ...

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