SBR100-10J SANYO, SBR100-10J Datasheet
SBR100-10J
Manufacturer Part Number
SBR100-10J
Description
DIODE SCHOTTKY 100V 10A TO-220ML
Manufacturer
SANYO
Datasheet
1.SBR100-10J.pdf
(3 pages)
Specifications of SBR100-10J
Voltage - Forward (vf) (max) @ If
850mV @ 5A
Current - Reverse Leakage @ Vr
100µA @ 10V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3, TO-220ML
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Other names
869-1024
Ordering number : ENN7450
Application
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Note : * Value per element
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Thermal Resistance (Junction-Case)
•
•
•
•
•
High frequency rectification (switching regulators,
converters, choppers).
Low reverse current.
Low switching noise.
High reliability due to highly reliable planar structure.
Attachment workability ability is good by
Mica-less package.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
Symbol
Symbol
Rth(j-c)
V RRM
V RSM
I FSM
Tstg
V R
V F
I O
I R
Tj
C
50Hz resistive load, Tc=107 C
50Hz sine wave, 1 cycle
I R =2mA, Tj=25 C*
I F =5A, Tj=25 C*
V R =50V, Tj=25 C*
V R =10V, Tj=25 C*
Junction-Case : Smoothed DC
SBR100-10J
Schottky Barrier Diode(Twin Type · Cathode Common)
Conditions
Package Dimensions
unit : mm
1320
Conditions
3.2
2.55
2.55
1 2 3
10.0
1.6
2.55
1.2
0.75
100V, 10A Rectifier
2.55
[SBR100-10J]
31504SD TS IM TA-100307
min
100
SBR100-10J
4.5
Ratings
2.8
0.7
typ
Ratings
170
1 : Anode
2 : Cathode
3 : Anode
SANYO : TO-220ML
2.4
--55 to +150
--55 to +150
max
0.85
100
105
100
4.0
10
80
No.7450-1/3
C / W
Unit
Unit
pF
V
V
A
A
V
V
C
C
A
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SBR100-10J Summary of contents
Page 1
... Tc=107 C I FSM 50Hz sine wave, 1 cycle Tj Tstg Symbol Conditions =2mA, Tj= =5A, Tj= =50V, Tj= =10V, Tj=25 C* Rth(j-c) Junction-Case : Smoothed DC SBR100-10J 100V, 10A Rectifier [SBR100-10J] 4.5 10.0 2.8 2.4 1.6 1.2 0.7 0. Anode 2. Cathode 3 : Anode SANYO : TO-220ML 2.55 2.55 Ratings 100 ...
Page 2
... Sine wave Average Forward Current 160 (1)Rectangular wav e =60 (2)Rectangular wav e =120 150 (3)Rectangular wav e =180 (4)Sine wav e =180 140 Rectangular 130 wave 120 110 100 ( Average Output Current SBR100-10J 1 0 0.8 1.2 0 IT05463 2.5 (3) 2.0 (4) 1.5 1.0 360 0.5 ...
Page 3
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. SBR100-10J ...