SBR100-10JS Sanyo Semiconductor Corporation, SBR100-10JS Datasheet

SBR100-10JS

Manufacturer Part Number

SBR100-10JS

Description

Schottky Barrier Diode

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.SBR100-10JS.pdf (3 pages)

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Ordering number : ENA0560

SBR100-10JS

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Note) * : Value per element

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Thermal Resistance

•

High frequency rectification (switching regulators, converters, choppers).

Low reverse current.

Low switching noise.

High reliability due to planar structure.

Attachment workability is good by Mica-less package.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Symbol

Rth(j-c)

V RRM

V RSM

I FSM

Tstg

V R

V F

I O

I R

SANYO Semiconductors

50Hz resistive load, Tc=107 C

50Hz sine wave, 1 cycle

I R =2mA, Tj=25 C*

I F =5A, Tj=25 C*

V R =50V, Tj=25 C*

V R =10V, Tj=25 C*

Junction-Case : Smoothed DC

SBR100-10JS

Schottky Barrier Diode (Twin Type · Cathode Common)

100V, 10A Rectifier

Conditions

DATA SHEET

N0806SD SY IM TC-00000297

min

100

Ratings

typ

Ratings

170

--55 to +150

max

0.85

100

105

100

4.0

No. A0560-1/3

C / W

Unit

Related parts for SBR100-10JS

SBR100-10JS Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SBR100-10JS SANYO Semiconductors Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 10A Rectifier ...

Page 2

... Forward Voltage (AV (1)Rectangular wav e =60 (2)Rectangular wav e =120 12 (3)Rectangular wav e =180 (4)Sine wav e =180 10 ( Rectangular 4 wave 2 Sine wave Average Output Current SBR100-10JS 1 : Anode 2 : Cathode 3 : Anode SANYO : TO-220ML(LS) 10 1.0 0.1 0.8 1.2 IT05463 2.5 (3) 2.0 (4) (2) 1.5 1.0 360 0.5 360 180 10 12 ...

Page 3

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. SBR100-10JS 1000 ...

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