BAW56W,135 NXP Semiconductors, BAW56W,135 Datasheet - Page 7

• Manufacturer Part Number: BAW56W,135
• Description: DIODE SW HI-SPEED DUAL SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BAW56W,135

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 150mA (DC)
• Voltage - Dc Reverse (vr) (max): 90V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934026020135

NXP Semiconductors
8. Test information
BAV756S_BAW56_SER_5
Product data sheet
Fig 5. Reverse recovery time test circuit and waveforms
Fig 6. Forward recovery voltage test circuit and waveforms
(1) I
R
V = V
S
R
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
Input signal: forward pulse rise time t
S
R
= 50
R
= 50
= 1 mA
I
I
F
R
S
1 k
D.U.T.
450
I
F
r
= 0.35 ns
D.U.T.
OSCILLOSCOPE
R
i
= 50
r
r
OSCILLOSCOPE
= 0.6 ns; reverse voltage pulse duration t
= 20 ns; forward current pulse duration t
mga881
SAMPLING
R
i
Rev. 05 — 26 November 2007
= 50
I
V
R
10 %
t
r
t
10 %
r
90 %
BAV756S; BAW56 series
input signal
90 %
input signal
t
p
t
p
p
p
= 100 ns; duty cycle
100 ns; duty cycle
t
High-speed switching diodes
t
V
I
F
V FR
= 0.05
output signal
0.005
output signal
© NXP B.V. 2007. All rights reserved.
t rr
mga882
(1)
t
t
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