BAW56W,135 NXP Semiconductors, BAW56W,135 Datasheet - Page 5

• Manufacturer Part Number: BAW56W,135
• Description: DIODE SW HI-SPEED DUAL SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BAW56W,135

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 150mA (DC)
• Voltage - Dc Reverse (vr) (max): 90V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934026020135

NXP Semiconductors
7. Characteristics
BAV756S_BAW56_SER_5
Product data sheet
Table 7.
[1]
[2]
Table 8.
T
[1]
[2]
[3]
Symbol
R
Symbol
Per diode
V
I
C
t
V
R
rr
amb
F
FR
th(j-sp)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Pulse test: t
When switched from I
When switched from I
= 25 C unless otherwise specified.
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to solder point
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
p
BAV756S
BAW56
BAW56S
BAW56T
BAW56W
300 s;
Rev. 05 — 26 November 2007
F
F
= 10 mA to I
= 10 mA; t
0.02.
r
= 20 ns.
R
= 10 mA; R
…continued
BAV756S; BAW56 series
Conditions
I
I
I
I
V
V
V
V
V
F
F
F
F
R
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 80 V
= 25 V; T
= 80 V; T
= 0 V; f = 1 MHz
Conditions
L
= 100 ; measured at I
j
j
= 150 C
= 150 C
High-speed switching diodes
[1]
[2]
[3]
Min
-
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
Max
255
360
255
350
300
Max
715
855
1
1.25
30
0.5
30
150
2
4
1.75
Unit
K/W
K/W
K/W
K/W
K/W
Unit
mV
mV
V
V
nA
pF
ns
V
5 of 15
A
A
A