BFG540W/X T/R NXP Semiconductors, BFG540W/X T/R Datasheet - Page 7

• Manufacturer Part Number: BFG540W/X T/R
• Description: RF Bipolar Small Signal NPN 8V 120mA 9GHZ
• Manufacturer: NXP Semiconductors

Specifications of BFG540W/X T/R

• Dc Collector/base Gain Hfe Min: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-343
• Other names: BFG540W/X,115

NXP Semiconductors
2000 May 23
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
R
Fig.11 Intermodulation distortion as a function of
V
Fig.13 Minimum noise figure as a function of
o
CE
L
(dB)
(dB)
d im
= 500 mV; f
= 75 .
−20
−30
−40
−50
−60
−70
F
= 8 V.
4
3
2
0
10
1
1
collector current; typical values.
f = 2000 MHz
collector current; typical values.
1000 MHz
(p + q  r)
900 MHz
500 MHz
20
= 793.25 MHz; V
30
10
40
CE
= 8 V; T
I
C
(mA)
50
amb
I C (mA)
MEA973
MLC049
= 25 C;
10
60
2
7
handbook, halfpage
handbook, halfpage
V
Fig.12 Second order intermodulation distortion as
Fig.14 Associated available gain as a function of
V
o
CE
F min
(dB)
(dB)
= 275 mV; f
−20
d 2
−30
−40
−50
−60
−70
= 8 V.
5
4
3
2
1
0
10
1
a function of collector current; typical
values.
collector current; typical values.
BFG540W/X; BFG540W/XR
2000 MHz
1000 MHz
900 MHz
500 MHz
(p + q)
20
= 810 MHz; V
30
CE
10
G ass
F min
= 8 V; T
40
I C (mA)
Product specification
amb
f = 900 MHz
BFG540W
= 25 C; R
50
1000 MHz
2000 MHz
I C (mA)
MRA760
MEA972
L
60
10
= 75 .
−5
15
20
10
5
0
2
G ass
(dB)