BFG540W/X T/R NXP Semiconductors, BFG540W/X T/R Datasheet - Page 5

• Manufacturer Part Number: BFG540W/X T/R
• Description: RF Bipolar Small Signal NPN 8V 120mA 9GHZ
• Manufacturer: NXP Semiconductors

Specifications of BFG540W/X T/R

• Dc Collector/base Gain Hfe Min: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-343
• Other names: BFG540W/X,115

NXP Semiconductors
2000 May 23
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
Fig.4
f = 1 GHz; T
Fig.6
(GHz)
CE
f
h FE
250
200
150
100
T
= 8 V.
50
12
0
10
8
4
0
10
−2
DC current gain as a function of
Transition frequency as a function of
collector current; typical values.
collector current; typical values.
1
amb
= 25 C.
10
−1
1
1
10
10
I
C
V
V
I C (mA)
CE
CE
(mA)
MRA749
MLC044
= 8 V
= 4 V
10
10
2
2
5
handbook, halfpage
Fig.5
I
C
(pF)
C re
= 0; f = 1 MHz.
0.8
0.6
0.4
0.2
1
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
BFG540W/X; BFG540W/XR
4
8
Product specification
V CB (V)
BFG540W
MRA750
12