BFG540W/X T/R NXP Semiconductors, BFG540W/X T/R Datasheet - Page 6

• Manufacturer Part Number: BFG540W/X T/R
• Description: RF Bipolar Small Signal NPN 8V 120mA 9GHZ
• Manufacturer: NXP Semiconductors

Specifications of BFG540W/X T/R

• Dc Collector/base Gain Hfe Min: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-343
• Other names: BFG540W/X,115

NXP Semiconductors
2000 May 23
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
Fig.7
I
Fig.9
f = 900 MHz; V
C
gain
(dB)
gain
(dB)
= 10 mA; V
50
30
20
10
40
30
20
10
0
0
10
0
Gain as a function of collector current;
Gain as a function of frequency; typical
typical values.
values.
MSG
G UM
MSG
CE
CE
= 8 V.
= 8 V.
10
10
2
20
30
10
3
f (MHz)
40
I
G max
G UM
C
G max
MLC045
MLC047
(mA)
10
50
4
6
handbook, halfpage
handbook, halfpage
f = 2 GHz; V
Fig.8
I
Fig.10 Gain as a function of frequency; typical
C
gain
(dB)
gain
(dB)
= 40 mA; V
30
20
10
50
40
30
20
10
0
0
10
0
Gain as a function of collector current;
typical values.
values.
BFG540W/X; BFG540W/XR
CE
G UM
MSG
CE
= 8 V.
= 8 V.
10
10
2
20
30
10
3
Product specification
BFG540W
f (MHz)
40
I
G max
G UM
C
G max
MLC048
MLC046
(mA)
10
50
4