PD57070 STMicroelectronics, PD57070 Datasheet - Page 4

• Manufacturer Part Number: PD57070
• Description: RF MOSFET Power N-Ch 65 Volt 7.0 Amp
• Manufacturer: STMicroelectronics

Specifications of PD57070

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 95 W
• Maximum Operating Temperature: + 165 C
• Package / Case: PowerSO-10-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 70W(Min)
• Power Gain (typ)@vds: 14.7dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 91@28VpF
• Output Capacitance (typ)@vds: 58@28VpF
• Reverse Capacitance (typ): 3.8@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 50%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 95000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Output Power vs. Supply Voltage
PD57070 - PD57070S
TYPICAL PERFORMANCE (PD55070S)
Input Return Loss vs. Output Power
Output Power vs. Bias Current
4/13
100
-10
-15
-20
-25
-30
80
60
40
20
80
70
60
50
40
30
20
10
-5
0
0
0
12
0
0
14
500
20
16
18
945 MHz
960 MHz
1000
40
20
Idq (m A)
Pout (W )
Vdd (V)
890,925 MHz
22
1500
60
890, 925 MHz
960 MHz
24
Idq = 250 m A
P in = 2.8 W
Vdd = 28 V
Pin = 2.8 W
Vdd = 28 V
Idq = 250 m A
26
2000
80
960 MHz
925 MHz
945 MHz
945 MHz
890 MHz
28
2500
30
100
Efficiency vs. Supply Voltage
Efficiency vs. Bias Current
Output Power vs. Gate-Source Voltage
100
60
50
40
30
20
10
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
12
0
0
925 MHz
960 MHz
890 MHz
14
890 MHz
945 MHz
500
1
16
925 MHz
945 MHz
960 MHz
18
1000
2
20
Idq (m A)
Vdd (V)
Vgs (V)
22
960 MHz
890 MHz
1500
3
24
Idq = 250 m A
Pin = 2.8 W
925, 945 MHz
Vdd = 28 V
Idq = 250 m A
P in = 2.8 W
Vdd = 28 V
Pin = 2.8 W
26
2000
4
28
2500
30
5