PD57070 STMicroelectronics, PD57070 Datasheet - Page 13

RF MOSFET Power N-Ch 65 Volt 7.0 Amp

PD57070

Manufacturer Part Number
PD57070
Description
RF MOSFET Power N-Ch 65 Volt 7.0 Amp
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD57070

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Power Dissipation
95 W
Maximum Operating Temperature
+ 165 C
Package / Case
PowerSO-10-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
70W(Min)
Power Gain (typ)@vds
14.7dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
2.5(Min)S
Input Capacitance (typ)@vds
91@28VpF
Output Capacitance (typ)@vds
58@28VpF
Reverse Capacitance (typ)
3.8@28VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
50%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
95000mW
Vswr (max)
5(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
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Part Number:
PD57070
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ST
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PD57070 - PD57070S
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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