PD57070 STMicroelectronics, PD57070 Datasheet - Page 3

• Manufacturer Part Number: PD57070
• Description: RF MOSFET Power N-Ch 65 Volt 7.0 Amp
• Manufacturer: STMicroelectronics

Specifications of PD57070

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 95 W
• Maximum Operating Temperature: + 165 C
• Package / Case: PowerSO-10-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 70W(Min)
• Power Gain (typ)@vds: 14.7dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 91@28VpF
• Output Capacitance (typ)@vds: 58@28VpF
• Reverse Capacitance (typ): 3.8@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 50%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 95000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Gain vs. Output Power
TYPICAL PERFORMANCE (PD55070S)
Capacitance vs.Supply Voltage
Gate-Source Voltage vs. Case Temperature
1000
1.02
1.01
0.99
0.98
0.97
100
18
16
14
12
10
10
8
1
1
-25
0
0
f = 1 MHz
4
20
0
925 MHz
945 MHz
8
25
40
890 MHz
960 MHz
12
Pout (W )
Tc (°C )
Vdd (V)
Crss
Ciss
Coss
16
50
60
20
Vdd = 28 V
Idq = 250 m A
75
80
ID = 6 A
ID = 5 A
ID = 4 A
ID = 3 A
ID = 2 A
24
100
100
28
Output Power vs. Input Power
Efficiency vs. Output Power
Drain Current vs. Gate-Surce Voltage
90
80
70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
8
7
6
5
4
3
2
1
0
0
0
1
Vds = 10 V
20
2
925 MHz
1
945 MHz
40
3
Pout (W )
P in (W )
890 MHz
PD57070 - PD57070S
Vgs (V)
960 MHz
2
945, 960 MHz
60
4
890 MHz
Vdd = 28 V
Idq = 250 m A
Vdd = 28 V
Idq = 250 m A
3
80
5
925 MHz
100
3/13
4
6