PD57060 STMicroelectronics, PD57060 Datasheet - Page 6

• Manufacturer Part Number: PD57060
• Description: RF MOSFET Power N-Ch 65 Volt 7.0 Amp
• Manufacturer: STMicroelectronics

Specifications of PD57060

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 79 W
• Maximum Operating Temperature: + 165 C
• Package / Case: PowerSO-10-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 60W(Min)
• Power Gain (typ)@vds: 14.3dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 83@28VpF
• Output Capacitance (typ)@vds: 58@28VpF
• Reverse Capacitance (typ): 3@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 54%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 79000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PD57060 - PD57060S
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TEST CIRCUIT
TEST CIRCUIT PHOTOMASTER
PD57060
PD57060
6.4 inches