PD57060 STMicroelectronics, PD57060 Datasheet - Page 11

• Manufacturer Part Number: PD57060
• Description: RF MOSFET Power N-Ch 65 Volt 7.0 Amp
• Manufacturer: STMicroelectronics

Specifications of PD57060

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 79 W
• Maximum Operating Temperature: + 165 C
• Package / Case: PowerSO-10-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 60W(Min)
• Power Gain (typ)@vds: 14.3dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 83@28VpF
• Output Capacitance (typ)@vds: 58@28VpF
• Reverse Capacitance (typ): 3@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 54%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 79000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note (1): Resin protrusions not included (max value: 0.15 mm per side)
DIM.
D1
R1
R2
A1
A2
A3
A4
E1
E2
E3
T1
T2
G
D
E
a
b
F
c
15.15
MIN.
1.62
0.15
0.23
3.4
1.2
5.4
9.4
7.4
9.3
7.3
5.9
PowerSO-10RF Straight Lead MECHANICAL DATA
10 deg
6 deg
TYP.
1.67
5.53
0.27
15.4
mm
3.5
1.3
0.2
0.2
9.5
7.5
9.4
7.4
6.1
0.5
1.2
0.8
15.65
MAX
1.72
0.25
5.65
0.32
0.25
3.6
1.4
9.6
7.6
9.5
7.5
6.3
CRITICAL DIMENSIONS:
- Overall width (L)
0.064
0.134
0.046
0.005
0.212
0.008
0.370
0.290
0.595
0.365
0.286
0.231
MIN.
10 deg
PD57060 - PD57060S
0.065
0.137
0.007
0.007
0.217
0.374
0.295
0.606
0.292
0.019
0.047
0.031
6 deg
Inch
TYP.
0.05
0.01
0.37
0.24
0.068
0.142
0.054
0.009
0.221
0.012
0.377
0.298
0.615
0.375
0.294
0.247
MAX
0.01
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