PD57060 STMicroelectronics, PD57060 Datasheet

RF MOSFET Power N-Ch 65 Volt 7.0 Amp

PD57060

Manufacturer Part Number
PD57060
Description
RF MOSFET Power N-Ch 65 Volt 7.0 Amp
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD57060

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Power Dissipation
79 W
Maximum Operating Temperature
+ 165 C
Package / Case
PowerSO-10-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
60W(Min)
Power Gain (typ)@vds
14.3dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
2.5(Min)S
Input Capacitance (typ)@vds
83@28VpF
Output Capacitance (typ)@vds
58@28VpF
Reverse Capacitance (typ)
3@28VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
54%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
79000mW
Vswr (max)
5(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
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PD57060
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ST
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www.st.com/rf/ (look for application note AN1294)
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57060S is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. PD57060S boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. PD57060S’s
superior linearity performance makes it an ideal
solution for base station applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially
excellent RF performances and ease of assembly.
ABSOLUTE MAXIMUM RATINGS (T
THERMAL DATA (T
March, 21 2003
28V
V
Symbol
Mounting recommendations are available in
R
(BR)DSS
OUT
P
T
V
th(j-c)
DISS
STG
I
Tj
GS
D
= 60 W with 14.3 dB gain @ 945 MHz /
optmized for RF needs and offers
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70°C)
Max. Operating Junction Temperature
Storage Temperature
Junction -Case Thermal Resistance
CASE
= 70
°
C)
Parameter
CASE
= 25
°
C)
The LdmoST Plastic FAMILY
RF POWER TRANSISTORS
ORDER CODE
ORDER CODE
PD57060S
PD57060
PowerSO-10RF
PowerSO-10RF
(formed lead)
(Straight lead)
-65 to +150
Value
165
1.0
65
79
7
20
PD57060S
PD57060
BRANDING
BRANDING
PD57060S
PD57060
°C/W
Unit
°C
°C
W
V
V
A
1/12

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PD57060 Summary of contents

Page 1

... It is designed for high gain, broad band commercial and industrial applications. It operates common source mode at frequencies GHz. PD57060S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57060S’s superior linearity performance makes it an ideal solution for base station applications ...

Page 2

... PD57060 - PD57060S ELECTRICAL SPECIFICATION (T STATIC Symbol (BR)DSS DSS GSS GS( DS(ON ISS OSS RSS GS DYNAMIC Symbol 100 mA OUT 100 100 100 mA Load DD DQ mismatch ALL PHASE ANGLES PIN CONNECTION GATE SC15200 PD57060S 890 MHz 925 MHz 945 MHz 960 MHz 2/ ° CASE ...

Page 3

... Output Power vs Input Power Pout ( 0 100 0 Drain Efficiency vs Output Power Nd (%) 70 925MHz 945MHz 60 960MHz VDS=28V IDQ=100mA PD57060 - PD57060S VDS=10 V 2.5 3 3.5 4 4.5 5 5.5 VGS (V) 945MHz 890MHz 925MHz 960MHz VDS=28V IDQ=100mA 0.5 1 1.5 2 2.5 3 3.5 Pin (W) 925MHz 945MHz 960MHz 890MHz VDS=28V IDQ=100mA Pout (W) 6 ...

Page 4

... PD57060 - PD57060S TYPICAL PERFORMANCE (PD57060S) Input Return Loss vs Output Power RL (dB) 0 890MHz -10 960MHz 925MHz -20 945MHz -30 - Pout (W) Drain Efficiency vs Bias Current Nd (%) 70 60 890MHz 945MHz 50 960MHz 925MHz 0.5 1 1.5 IDQ (A) Drain Efficiency vs Supply Voltage Nd (%) 70 60 925MHz VDS (V) 4/12 Output Power vs Bias Curent Pout (W) ...

Page 5

... ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.1 F, 500 V SURFACE MOUNT CERAMIC CHIP CAPACITOR ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 100 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 220 ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR ROGER, ULTRA LAM 2000, THK 0.030” 2.55 2oz SIDES. PD57060 - PD57060S ...

Page 6

... PD57060 - PD57060S TEST CIRCUIT PD57060 TEST CIRCUIT PHOTOMASTER PD57060 6/12 6.4 inches ...

Page 7

... COMMON SOURCE S-PARAMETER (PD57060S 1 FREQ (MHz) 150 0.876 200 0.892 250 0.912 300 0.927 350 0.938 400 0.948 450 0.956 500 0.961 550 0.966 600 0.968 650 0.971 700 0.974 750 0.975 800 0.976 850 0.977 900 0.977 950 0.979 1000 ...

Page 8

... PD57060 - PD57060S COMMON SOURCE S-PARAMETER (PD57060S FREQ (MHz) 150 0.881 200 0.897 250 0.915 300 0.929 350 0.939 400 0.949 450 0.956 500 0.961 550 0.966 600 0.969 650 0.972 700 0.974 750 0.975 800 0.976 850 0.977 900 0.977 950 ...

Page 9

... COMMON SOURCE S-PARAMETER (PD57060S 13 FREQ (MHz) 150 0.880 -173 200 0.891 -173 250 0.904 -175 300 0.915 -175 350 0.924 -176 400 0.933 -177 450 0.940 -177 500 0.946 -178 550 0.953 -179 600 0.956 -179 650 0.961 -180 700 0.964 ...

Page 10

... PD57060 - PD57060S PowerSO-10RF Formed Lead (Gull Wing) MECHANICAL DATA DIM. MIN 3.4 A3 1 5.4 c 0.23 D 9.4 D1 7.4 E 13.85 E1 9.3 E2 7 deg T1 T2 Note (1): Resin protrusions not included (max value: 0.15 mm per side) 10/12 mm TYP. MAX 0.05 0.1 3.5 3.6 1 ...

Page 11

... CRITICAL DIMENSIONS: - Overall width (L) PD57060 - PD57060S Inch MIN. TYP. 0.064 0.065 0.134 0.137 0.046 0.05 0.005 0.007 0.007 0.212 0.217 0.008 0.01 0.370 0.374 ...

Page 12

... PD57060 - PD57060S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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