BLF4G10LS-160 NXP Semiconductors, BLF4G10LS-160 Datasheet - Page 6

• Manufacturer Part Number: BLF4G10LS-160
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-160

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G10LS-160,112

NXP Semiconductors
BLF4G10LS-160_1
Product data sheet
Fig 7. GSM EDGE rms EVM and peak EVM as
Fig 9. CDMA power gain and drain efficiency as
EVM
(dB)
(%)
G
p
16
12
20
19
18
17
16
8
4
0
V
f = 894 MHz.
functions of average load power; typical values
V
Test signal: IS-95 with PAR = 9.9 dB at 0.01 %
probability.
functions of average load power; typical values,
measured in a CDMA demo test circuit
28
0
DS
DS
= 28 V; I
= 28 V; I
20
32
Dq
Dq
= 900 mA; T
= 1100 mA; f = 881.5 MHz.
40
36
G
D
p
EVM
60
40
EVM
case
rms
= 25 C;
M
P
80
44
P
L(AV)
001aag552
001aag554
L(AV)
(dBm)
(W)
100
48
Rev. 01 — 19 June 2007
40
30
20
10
0
(%)
D
Fig 8. GSM EDGE ACPR and rms EVM as functions of
Fig 10. CDMA power gain as a function of average load
ACPR
(dBc)
(dB)
(1) f = 869 MHz.
(2) f = 881.5 MHz.
(3) f = 894 MHz.
G
p
56
60
64
68
72
20
19
18
17
16
V
f = 894 MHz.
drain efficiency; typical values
V
power at various frequencies; typical values,
measured in a CDMA demo test circuit
28
0
DS
DS
= 28 V; I
= 28 V; I
32
1
2
3
ACPR
Dq
Dq
EVM
20
= 900 mA; T
= 1100 mA.
BLF4G10LS-160
rms
400
36
UHF power LDMOS transistor
40
case
40
= 25 C;
© NXP B.V. 2007. All rights reserved.
P
44
D
L(AV)
001aag553
001aag555
(%)
(dBm)
60
48
4
3
2
1
0
EVM
(%)
6 of 15