BLF4G10LS-160 NXP Semiconductors, BLF4G10LS-160 Datasheet - Page 11

• Manufacturer Part Number: BLF4G10LS-160
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-160

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G10LS-160,112

NXP Semiconductors
BLF4G10LS-160_1
Product data sheet
Table 10.
[1]
[2]
Component
L10
R1, R2
R3
R4
R5
R6
R7
R8
R9
R10
Q1
Q2
Q3
American Technical Ceramics type 100B or capacitor of same quality.
The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with
thickness = 0.635 mm.
List of components (see
Description
stripline
SMD resistor
SMD resistor
potentiometer
SMD resistor
SMD resistor
SMD resistor
SMD resistor
SMD resistor
SMD resistor
voltage regulator
transistor
BLF4G10-160
Rev. 01 — 19 June 2007
Figure 14
Value
430
300
200
2 k
1.1 k
11 k
5.1
5.1 k
910
and
Figure
[2]
Remarks
(W
78L08
2N2222
BLF4G10LS-160
15).
UHF power LDMOS transistor
L) 0.914 mm
…continued
© NXP B.V. 2007. All rights reserved.
6.858 mm
r
= 6.15 and
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