BLF4G10LS-160 NXP Semiconductors, BLF4G10LS-160 Datasheet - Page 2

• Manufacturer Part Number: BLF4G10LS-160
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-160

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G10LS-160,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF4G10LS-160_1
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLF4G10LS-160 -
Symbol
V
V
I
T
T
Symbol
R
D
stg
j
DS
GS
th(j-case)
RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multi carrier
applications in the 800 MHz to 1000 MHz frequency range.
Connected to flange
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Parameter
thermal resistance from junction
to case
Description
drain
gate
source
Package
Name
Rev. 01 — 19 June 2007
Description
flanged LDMOST ceramic package; 2 mounting holes; 2
leads
Conditions
Conditions
T
[1]
case
P
P
L
L
Simplified outline
= 50 W
= 130 W
= 80 C
BLF4G10LS-160
UHF power LDMOS transistor
1
2
3
Typ
0.49
0.38
Symbol
Min
-
-
-
© NXP B.V. 2007. All rights reserved.
0.5
65
Max
0.58
0.47
2
Max
65
+15
15
+150
200
sym112
Version
SOT502A
1
3
Unit
K/W
K/W
2 of 15
Unit
V
V
A
C
C