BLF6G20-230PRN NXP Semiconductors, BLF6G20-230PRN Datasheet - Page 3

RF MOSFET Small Signal 230W, 1800-2000MHz

BLF6G20-230PRN

Manufacturer Part Number
BLF6G20-230PRN
Description
RF MOSFET Small Signal 230W, 1800-2000MHz
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G20-230PRN

Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.165 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934063293112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF6G20-230PRN
Manufacturer:
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Quantity:
1 000
Part Number:
BLF6G20-230PRN
Manufacturer:
NXP
Quantity:
5 000
NXP Semiconductors
4. Limiting values
5. Thermal characteristics
6. Characteristics
BLF6G20-230PRN_20S-230PRN_2
Product data sheet
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Table 6.
T
Symbol
V
V
T
T
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
T
DSS
DSX
GSS
j
fs
stg
case
j
DS
GS
(BR)DSS
GS(th)
th(j-case)
DS(on)
= 25
°
C per section; unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Limiting values
Thermal characteristics
Characteristics
Parameter
drain-source voltage
gate-source voltage
storage temperature
case temperature
junction temperature
Parameter
thermal resistance from junction
to case
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 9 February 2010
Conditions
Conditions
V
V
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
DS
DS
GS
DS
GS
DS
GS
= 6.3 A
= 0 V; I
= 10 V; I
= 0 V
= 28 V
= 60 V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
Conditions
T
P
BLF6G20(S)-230PRN
case
L(AV)
GS(th)
GS(th)
D
= 80 °C;
= 65 W
D
D
= 1.8 mA
+ 3.75 V;
DS
+ 3.75 V;
= 180 mA
= 9 A
= 0 V
Power LDMOS transistor
Min
65
1.4
-
-
-
-
-
-
Typ
0.38
-
Min
-
−0.5
−65
-
Typ
-
1.9
-
-
30
-
12
0.1
© NXP B.V. 2010. All rights reserved.
Max
65
+13
+150
150
225
Max
-
2.4
3
5
-
300
-
0.165 Ω
Unit
K/W
3 of 13
Unit
V
V
°C
°C
°C
Unit
V
V
μA
μA
A
nA
S

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