BLF6G20-230PRN NXP Semiconductors, BLF6G20-230PRN Datasheet - Page 2

• Manufacturer Part Number: BLF6G20-230PRN
• Description: RF MOSFET Small Signal 230W, 1800-2000MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-230PRN

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063293112

NXP Semiconductors
2. Pinning information
3. Ordering information
BLF6G20-230PRN_20S-230PRN_2
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Pin
BLF6G20-230PRN (SOT539A)
1
2
3
4
5
BLF6G20S-230PRN (SOT539B)
1
2
3
4
5
Type number
BLF6G20-230PRN
BLF6G20S-230PRN -
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range
Connected to flange
Pinning
Ordering information
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
Rev. 02 — 9 February 2010
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LDMOST ceramic package;
4 leads
BLF6G20(S)-230PRN
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
© NXP B.V. 2010. All rights reserved.
3
4
3
4
1
2
1
2
Version
SOT539A
SOT539B
sym117
sym117
2 of 13
5
5