BLF6G20-230PRN NXP Semiconductors, BLF6G20-230PRN Datasheet - Page 10

• Manufacturer Part Number: BLF6G20-230PRN
• Description: RF MOSFET Small Signal 230W, 1800-2000MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-230PRN

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063293112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF6G20-230PRN_20S-230PRN_2
Product data sheet
Document ID
BLF6G20-230PRN_20S-230PRN_2
Modifications
BLF6G20-230PRN_1
Revision history
Table 10.
Acronym
3GPP
CCDF
DPCH
LDMOS
LDMOST
PAR
PDPCH
RF
W-CDMA
Abbreviations
Release
date
20100209
20081202
•
•
•
All information provided in this document is subject to legal disclaimers.
Data sheet status changed to productive data sheet.
Data sheet expanded to include the BLF6G20S-230PRN transistor.
Section 12 “Legal information”
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Dedicated Physical CHannel
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Wideband Code Division Multiple Access
Rev. 02 — 9 February 2010
Data sheet status
Product data sheet
Objective data sheet
export control disclaimer added.
BLF6G20(S)-230PRN
Change notice Supersedes
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-
Power LDMOS transistor
BLF6G20-230PRN_1
-
© NXP B.V. 2010. All rights reserved.
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