BLF6G20-230PRN NXP Semiconductors, BLF6G20-230PRN Datasheet - Page 12

• Manufacturer Part Number: BLF6G20-230PRN
• Description: RF MOSFET Small Signal 230W, 1800-2000MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-230PRN

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063293112

NXP Semiconductors
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
13. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
BLF6G20-230PRN_20S-230PRN_2
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 9 February 2010
[e-mail]
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
BLF6G20(S)-230PRN
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
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