BLS3135-10 TRAY NXP Semiconductors, BLS3135-10 TRAY Datasheet - Page 5

• Manufacturer Part Number: BLS3135-10 TRAY
• Description: RF Bipolar Power BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of BLS3135-10 TRAY

• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 34000 mW
• Package / Case: SOT-445
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS3135-10,114

Philips Semiconductors
2000 Feb 01
handbook, halfpage
Microwave power transistor
V
Fig.6
CB
( )
= 40 V; class-C; P
Z i
8
4
0
4
8
3
Input impedance as a function of frequency
(series components); typical values.
L
= 10 W.
3.2
x i
r i
3.4
f (GHz)
MCD860
3.6
5
handbook, halfpage
V
Fig.7
CB
( )
Z L
= 40 V; class-C; P
12
8
4
0
3
Load impedance as a function of frequency
(series components); typical values.
R L
X L
L
3.2
= 10 W.
3.4
BLS3135-10
Product specification
f (GHz)
MCD861
3.6