BF1206 NXP Semiconductors, BF1206 Datasheet - Page 17

• Manufacturer Part Number: BF1206
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1206

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1206,115

NXP Semiconductors
2003 Nov 17
handbook, halfpage
handbook, halfpage
Dual N-channel dual-gate MOS-FET
V
Fig.31 Input admittance as a function of frequency;
V
Fig.33 Forward transfer admittance and phase as
DS
DS
(mS)
(mS)
10
10
Y is
y fs
10
10
= 5 V; V
= 5 V; V
10
10
−1
−2
1
1
2
2
10
10
typical values; amplifier b.
a function of frequency; typical values;
amplifier b.
G2
G2
= 4 V; I
= 4 V; I
D
D
= 12 mA; T
= 12 mA; T
10
10
2
2
amb
amb
−ϕ fs
b is
y fs
g is
= 25 C.
= 25 C.
f (MHz)
f (MHz)
MLE286
MLE284
10
10
3
3
−10
(deg)
−10
−1
ϕ fs
2
17
handbook, halfpage
handbook, halfpage
V
Fig.32 Reverse transfer admittance and phase as
V
Fig.34 Output admittance as a function of
DS
DS
(mS)
(μS)
Y os
10
y rs
10
10
10
= 5 V; V
= 5 V; V
10
10
−1
1
1
3
2
2
10
10
a function of frequency; typical values;
amplifier b.
frequency; typical values; amplifier b.
G2
G2
= 4 V; I
= 4 V; I
D
D
= 12 mA; T
= 12 mA; T
10
10
2
2
amb
amb
b os
g os
ϕ rs
y rs
= 25 C.
= 25 C.
f (MHz)
f (MHz)
Product specification
BF1206
MLE285
MLE287
10
10
3
3
−10
(deg)
−10
−10
−1
ϕ rs
3
2