BF1206 NXP Semiconductors, BF1206 Datasheet - Page 15

• Manufacturer Part Number: BF1206
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1206

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1206,115

NXP Semiconductors
2003 Nov 17
handbook, halfpage
Dual N-channel dual-gate MOS-FET
(1) R
(2) R
(3) R
(4) R
Fig.25 Drain current as a function of gate 1 (V
V
R
(mA)
G2-S
G1
I D
= 150 k (connected to V
24
16
8
0
= 4 V; T
G1
G1
G1
G1
0
= 270 k.
= 220 k.
= 180 k.
= 150 k.
and drain supply voltage; typical values;
amplifier b.
j
= 25 C.
2
GG
); see Fig.35.
4
(5) R
(6) R
(7) R
V GG = V DS (V)
G1
G1
G1
= 120 k.
= 100 k.
= 82 k.
6
(1)
(2)
(3)
(4)
(5)
(6)
(7)
MLE278
8
GG
)
15
handbook, halfpage
V
R
(1) V
(2) V
(3) V
Fig.26 Drain current as a function of gate 2
DS
G1
(mA)
I D
= 5 V; T
= 150 k (connected to V
16
12
GG
GG
GG
8
4
0
0
= 5 V.
= 4.5 V.
= 4 V.
voltage; typical values; amplifier b.
j
= 25 C.
2
GG
(4) V
(5) V
); see Fig.35.
GG
GG
= 3.5 V.
= 3 V.
4
Product specification
V G2-S (V)
(1)
(2)
(3)
(4)
(5)
BF1206
MLE279
6