BLF6G10-45 /T3 NXP Semiconductors, BLF6G10-45 /T3 Datasheet - Page 6

• Manufacturer Part Number: BLF6G10-45 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10-45 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 1W(Typ)
• Power Gain (typ)@vds: 22.5@28VdB
• Frequency (min): 920MHz
• Frequency (max): 1GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.1Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 8%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10-45,135

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V
V
GG
DD
C10
C9
C11
C12
C13
C14
C15
C16
R2
R1
F1
R3
input
output
50 Ω
C8
C7
50 Ω
C1
C2
C3
C4
C6
C5
001aah532
Fig 6.
Test circuit for operation at 900 MHz