BLS2731-110 TRAY NXP Semiconductors, BLS2731-110 TRAY Datasheet - Page 7

• Manufacturer Part Number: BLS2731-110 TRAY
• Description: RF Bipolar Power BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-110 TRAY

• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 500000 mW
• Package / Case: SOT-423
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS2731-110,114

Philips Semiconductors
PACKAGE OUTLINE
2001 Dec 05
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
Microwave power transistor
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT423A
0.225
0.193
5.72
4.90
A
H
0.375
0.365
9.53
9.27
U 2
A
A
b
0.004
0.002
0.10
0.05
c
IEC
12.09
11.71
0.476
0.461
D
12.83
12.57
0.505
0.495
D 1
D 1
U 1
JEDEC
D
q
b
0.348
0.337
8.84
8.56
E
REFERENCES
10.29
10.03
0.405
0.395
E 1
3
1
2
0
0.062
0.058
1.58
1.47
w 2
F
C
scale
EIAJ
M
5
7
C
19.81
18.29
0.78
0.72
H
M
F
B
p
10 mm
0.135
0.125
3.43
3.18
p
w 1
M
0.132
0.116
3.35
2.95
A
Q
M
B
16.51
0.65
M
q
22.99
22.73
0.905
0.895
PROJECTION
U 1
E 1
EUROPEAN
0.390
0.380
9.91
9.65
U 2
c
Q
BLS2731-110
Product specification
0.25
0.01
w 1
ISSUE DATE
99-03-29
E
0.76
0.03
w 2
SOT423A